IRF9Z24NS similares

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    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
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IRF9Z24NS Datasheet y Espec

Fabricante : IR 

Embalaje : DDPak 

Pins : 3 

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 184 KB

Aplicación : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A 

IRF9Z24NS PDF Download