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IRFB38N20D especificación: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
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IRFB38N20D Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 146 KB
Aplicación : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
IRFB38N20D PDF Download