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IRFBA22N50A especificación: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A
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IRFBA22N50A Datasheet y Espec
Fabricante : IR
Embalaje : Super-220
Pins : 3
Temperatura : Min -40 °C | Max 175 °C
Tamaño : 116 KB
Aplicación : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A
IRFBA22N50A PDF Download