Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRFBC30
IRFBC30 especificación: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30 similares
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFBC30 Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 190 KB
Aplicación : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30 PDF Download