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IRFBC30AS especificación: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
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IRFBC30AS Datasheet y Espec
Fabricante : IR
Embalaje : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 161 KB
Aplicación : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30AS PDF Download