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IRFBE30 especificación: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A
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IRFBE30 Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 183 KB
Aplicación : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A
IRFBE30 PDF Download