IRFI1010N especificación: HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A

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IRFI1010N Datasheet y Espec

Fabricante : IR

Embalaje : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 119 KB

Aplicación : HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A