Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRFL110
IRFL110 especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
IRFL110 similares
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.16 Ohm, ID = 1.9A
- IRFL024N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.075 Ohm, ID = 2.8A
- IRFL1006
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
- IRFL110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
- IRFL210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A
- IRFL214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 0.79A
IRFL110 Datasheet y Espec
Fabricante : IR
Embalaje : SOT-223
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 268 KB
Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
IRFL110 PDF Download