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IRFPF30 especificación: HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 3.7 Ohm, ID = 3.6 A
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IRFPF30 Datasheet y Espec
Fabricante : IR
Embalaje : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 181 KB
Aplicación : HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 3.7 Ohm, ID = 3.6 A
IRFPF30 PDF Download