Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRFU120N
IRFU120N especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
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IRFU120N Datasheet y Espec
Fabricante : IR
Embalaje : I-PAK
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 156 KB
Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
IRFU120N PDF Download