Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRGBC30S
IRGBC30S especificación: Insulated gate bipolar transistor
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IRGBC30S Datasheet y Espec
Fabricante : IR
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 277 KB
Aplicación : Insulated gate bipolar transistor
IRGBC30S PDF Download