Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > PVT412S-T
PVT412S-T especificación: HEXFET power MOSFET photovoltaic relay
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PVT412S-T Datasheet y Espec
Fabricante : IR
Embalaje : DIP
Pins : 6
Temperatura : Min -40 °C | Max 85 °C
Tamaño : 328 KB
Aplicación : HEXFET power MOSFET photovoltaic relay
PVT412S-T PDF Download