Path:OKDatasheet > Datasheet Semiconductor > IXYS Datasheet > IXBT16N170
IXBT16N170 especificación: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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IXBT16N170 Datasheet y Espec
Fabricante : IXYS
Embalaje : TO-268
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 54 KB
Aplicación : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 PDF Download