Path:OKDatasheet > Datasheet Semiconductor > IXYS Datasheet > IXDT30N120
IXDT30N120 especificación: 1200V high voltage IGBT with optional diode
IXDT30N120 similares
- IXDT30N120
- 1200V high voltage IGBT with optional diode
- IXDT30N120D1
- 1200V high voltage IGBT with optional diode
IXDT30N120 Datasheet y Espec
Fabricante : IXYS
Embalaje : TO-268AA
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 94 KB
Aplicación : 1200V high voltage IGBT with optional diode
IXDT30N120 PDF Download