Path:OKDatasheet > Datasheet Semiconductor > IXYS Datasheet > IXGT31N60D1
IXGT31N60D1 especificación: 600V HiPerFET power MOSFET
IXGT31N60D1 similares
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- IXGT20N100
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- IXGT20N60B
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- IXGT20N60BD1
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IXGT31N60D1 Datasheet y Espec
Fabricante : IXYS
Embalaje : TO-268
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 58 KB
Aplicación : 600V HiPerFET power MOSFET
IXGT31N60D1 PDF Download