Path:OKDatasheet > Datasheet Semiconductor > Intersil Datasheet > FSYC163D
FSYC163D especificación: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D similares
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D Datasheet y Espec
Fabricante : Intersil
Embalaje :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 67 KB
Aplicación : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D PDF Download