Path:OKDatasheet > Datasheet Semiconductor > JGD Datasheet > 1N5817
1N5817 especificación: 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V.
Path:OKDatasheet > Datasheet Semiconductor > JGD Datasheet > 1N5817
1N5817 especificación: 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V.
Fabricante : JGD
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 144 KB
Aplicación : 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V.