1N747D especificación: 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.

1N747D similares

1N746
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-10% standard tolerance.
1N746C
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance.
1N746D
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-1% tolerance.
1N747
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-10% standard tolerance.
1N747A
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance.
1N747C
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance.
1N747D
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.
1N748
- 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% standard tolerance.

1N747D Datasheet y Espec

Fabricante : JGD

Embalaje : DO-35

Pins : 2

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 218 KB

Aplicación : 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.