| Parte No | Fabricante | Aplicación |
|---|
| SMAJ120CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional. |
| 3EZ17D3 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-3% tolerance. |
| SMBJ5942 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
| 3EZ56D3 | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-3% tolerance. |
| 1N982D | JGD | 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-1% tolerance. |
| SR260 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 2.0 A. |
| 3EZ14D10 | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-10% tolerance. |
| BY397 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| 3EZ6.8D5 | JGD | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-5% tolerance. |
| P6KE68A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. |
| SMAJ78A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. |
| HA14G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| SMBJ5953B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-5% tolerance. |
| 3EZ5.1D2 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-2% tolerance. |
| ZMM5257D | JGD | Surface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-20% tolerance. |
| 1N5916 | JGD | 1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-20% tolerance. |
| 1N5546 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| 1N4112D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 18V. 1% tolerance. |
| SF11LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
| SMAJ26C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional. |
| P4KE200C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
| 3EZ180D4 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-4% tolerance. |
| P6KE27 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. |
| P6KE20CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional. |
| 3EZ39D4 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-4% tolerance. |
| 3EZ39D3 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-3% tolerance. |
| P6KE200C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
| 1W02G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. |
| 1N4728D | JGD | 1W zener diode. Nominal zener voltage 3.3V. 1% tolerance. |
| ZMM5258C | JGD | Surface mount zener diode. Nominal zener voltage 36 V. Test current 3.4 mA. +-10% tolerance. |
