Path:okDatasheet > Datasheet Semiconductor > JGD Datasheet > JGD-112

0 1N5920A 1N4120D 1N5947A BZX84C6V8 BB824 3EZ33D10 1N5527 1N5932A S1J P4KE20A 3EZ43D4 KBU804G KBU1006 1N5545D ZMM5237D SMBJ17 RL206G SMAJ40C MMBD1501A SMBJ5954C SFR603 P6KE62A SMBJ13C SMBJ30C SMAJ33 6A2G 1N5925B

JGD Catálogo de datos-112

Parte NoFabricanteAplicación
P6KE56CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. Bidirectional.
MSB051 JGDSingle phase 0.5A glass passivated bridge rectifier. Repetitive peak reverse voltage 100V.
EM520 JGD0.5 A silicon rectifier. Max recurrent peak reverse voltage 2000 V.
1N5920A JGD1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-10% tolerance.
1N4120D JGD500mW low noise silicon zener diode. Nominal zener voltage 30V. 1% tolerance.
1N5947A JGD1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance.
BZX84C6V8 JGD350mW zener diode, 6.8V
BB824 JGDSurface mount switching diode.
3EZ33D10 JGD3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-10% tolerance.
1N5527 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-20% tolerance.
1N5932A JGD1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-10% tolerance.
S1J JGDSurface mount rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A.
P4KE20A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V.
3EZ43D4 JGD3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-4% tolerance.
KBU804G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
KBU1006 JGDSingle phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
1N5545D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-1% tolerance.
ZMM5237D JGDSurface mount zener diode. Nominal zener voltage 8.2 V. Test current 20 mA. +-20% tolerance.
SMBJ17 JGDSurface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 23.1 V (max). Test current 1.0 mA.
RL206G JGDGlass passivated rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2.0 A.
SMAJ40C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional.
MMBD1501A JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
SMBJ5954C JGD1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance.
SFR603 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 6.0 A.
P6KE62A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 62 V.
SMBJ13C JGDSurface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 17.6 V (max). Test current 1.0 mA. Bidirectional.
SMBJ30C JGDSurface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 40.7 V (max). Test current 1.0 mA. Bidirectional.
SMAJ33 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V.
6A2G JGD6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 200 V.
1N5925B JGD1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-5% tolerance.

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