Path:okDatasheet > Datasheet Semiconductor > Leshan Radio Datasheet > Leshan Radio-63

8.2 BC858BDW1T1 1N5259A MC74VHC1G02DFT1 1N758B MTZJ39G MMBZ5259BLT1 HER303 MTZJ13A MUN5216DW1T1 1.5KE16A SF15 P4KE130 1N5268A MMBV3102LT1 1N5270B BZX84C9V1LT1 BC847BLT1 MMBZ5264BLT1 FR205 MTZJ20B 1N4758B 1N5222D 1N5267B DF005 UF4002 1N5248A BAV99LT1

Leshan Radio Catálogo de datos-63

Parte NoFabricanteAplicación
SMAJ45A Leshan Radio45 V, 1 mA, transient voltage suppressor
1N5403G Leshan Radio400 V, 3 A, general purpose GPP diode
P6KE8.2 Leshan Radio8.2 V, 10 mA, 600 W, transient voltage suppressor
BC858BDW1T1 Leshan Radio30 V, dual general purpose transistor
1N5259A Leshan Radio39 V, 3.2 mA, zener diode
MC74VHC1G02DFT1 Leshan Radio2-input NOR gate
1N758B Leshan Radio10 V, 20 mA, zener diode
MTZJ39G Leshan Radio39 V, 5 mA, zener diode
MMBZ5259BLT1 Leshan Radio39 V, 3.2 mA, 225 mW, semiconductor
HER303 Leshan Radio200 V, 3 A, high efficiency diode
MTZJ13A Leshan Radio13 V, 5 mA, zener diode
MUN5216DW1T1 Leshan Radio50 V, dual bias resistor transistor
1.5KE16A Leshan Radio16 V, 1 mA, 1500 W, transient voltage suppressor
SF15 Leshan Radio300 V, 1 A, super fast diode
P4KE130 Leshan Radio130 V, 1 mA, 400 W, transient voltage suppressor
1N5268A Leshan Radio82 V, 1.5 mA, zener diode
MMBV3102LT1 Leshan Radio30 V, silicon tuning diode
1N5270B Leshan Radio91 V, 1.4 mA, zener diode
BZX84C9V1LT1 Leshan Radio9.1 V, 225 mW, semiconductor
BC847BLT1 Leshan Radio45 V, general purpose transistor
MMBZ5264BLT1 Leshan Radio60 V, 2.1 mA, 225 mW, semiconductor
FR205 Leshan Radio600 V, 2 A, fast recovery diode
MTZJ20B Leshan Radio20 V, 5 mA, zener diode
1N4758B Leshan Radio56 V, zener diode
1N5222D Leshan Radio2.5 V, 20 mA, zener diode
1N5267B Leshan Radio75 V, 1.7 mA, zener diode
DF005 Leshan Radio50 V, 1 A, bridge rectifier
UF4002 Leshan Radio100 V, super fast diode
1N5248A Leshan Radio18 V, 7.0 mA, zener diode
BAV99LT1 Leshan Radio70 V, 215 mA, dual switching diode

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