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2 1N5241A P4KE62A FR256 1.5KE220A 1N5400G MC74VHC1G03DTT3 1N976A 1N5227B 05WS18 P6KE47 P4KE13 1N990A 1N5229A SMAJ33A MTZJ20C 1N988C HVC300A 1N5264D 1N958B FR154G MMBZ5221BLT1 1N976B 1N4752A MUN5133T1 MC74VHC1G135DTT3 MMBV2108LT1 FR107G

Leshan Radio Catálogo de datos-71

Parte NoFabricanteAplicación
P4KE9.1A Leshan Radio9.1 V, 1 mA, 400 W, transient voltage suppressor
R2000F Leshan Radio2000 V, 0.2 A high voltage fast recovery diode
MP352 Leshan Radio200 V, 35 A, bridge rectifier
1N5241A Leshan Radio11 V, 20 mA, zener diode
P4KE62A Leshan Radio62 V, 1 mA, 400 W, transient voltage suppressor
FR256 Leshan Radio800 V, 2.5 A, fast recovery diode
1.5KE220A Leshan Radio220 V, 1 mA, 1500 W, transient voltage suppressor
1N5400G Leshan Radio50 V, 3 A, general purpose GPP diode
MC74VHC1G03DTT3 Leshan Radio2-input NAND gate
1N976A Leshan Radio43 V, zener diode
1N5227B Leshan Radio3.6 V, 20 mA, zener diode
05WS18 Leshan Radio400 mW, 5 mA, zener diode
P6KE47 Leshan Radio47 V, 1 mA, 600 W, transient voltage suppressor
P4KE13 Leshan Radio13 V, 1 mA, 400 W, transient voltage suppressor
1N990A Leshan Radio160 V, zener diode
1N5229A Leshan Radio4.3 V, 20 mA, zener diode
SMAJ33A Leshan Radio33 V, 1 mA, transient voltage suppressor
MTZJ20C Leshan Radio20 V, 5 mA, zener diode
1N988C Leshan Radio130 V, zener diode
HVC300A Leshan Radio32 V, variable capacitance diode
1N5264D Leshan Radio60 V, 2.1 mA, zener diode
1N958B Leshan Radio7.5 V, zener diode
FR154G Leshan Radio400 V, 1.5 A fast GPP diode
MMBZ5221BLT1 Leshan Radio2.4 V, 20 mA, 225 mW, semiconductor
1N976B Leshan Radio43 V, zener diode
1N4752A Leshan Radio33 V, zener diode
MUN5133T1 Leshan Radio50 V, bias resistor transistor
MC74VHC1G135DTT3 Leshan Radio2-input NAND schmitt-trigger with open drain output
MMBV2108LT1 Leshan Radio30 V, silicon tuning diode
FR107G Leshan Radio1000 V, 1 A fast GPP diode

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