Path:OKDatasheet > Datasheet Semiconductor > MDE Semiconductor Datasheet > 30KW30
30KW30 especificación: 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
Path:OKDatasheet > Datasheet Semiconductor > MDE Semiconductor Datasheet > 30KW30
30KW30 especificación: 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
Fabricante : MDE Semiconductor
Embalaje : P-600
Pins : 2
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 182 KB
Aplicación : 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications