Path:okDatasheet > Datasheet Semiconductor > MDE Semiconductor Datasheet > MDE Semiconductor-1
15KP70A 30KW156A SMAJ22A 5KP8.5 MAX20-24.0CA 3T180B SMBJ120A 3KP9.0A SMAJ15 5KP8.5A MAX20-78.0C P4KE75 15KW70A 3KP28A P4KE440 15KW20 SMDJ12A MAX40-60.0C P6KE120A 15KW26A SMCJ75A SMDJ130 SMAJ33 1.5KE220A SMBJ100A P4KE12A P6KE33 SMDJ33A
Parte No | Fabricante | Aplicación |
---|---|---|
MDE-20D511K | MDE Semiconductor | 510V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
20KW88A | MDE Semiconductor | 88.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
15KP70A | MDE Semiconductor | 70V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
30KW156A | MDE Semiconductor | 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMAJ22A | MDE Semiconductor | 22.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
5KP8.5 | MDE Semiconductor | 8.50V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX20-24.0CA | MDE Semiconductor | 24.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
3T180B | MDE Semiconductor | 160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
SMBJ120A | MDE Semiconductor | 120.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
3KP9.0A | MDE Semiconductor | 9.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMAJ15 | MDE Semiconductor | 15.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
5KP8.5A | MDE Semiconductor | 8.50V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX20-78.0C | MDE Semiconductor | 78.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
P4KE75 | MDE Semiconductor | 60.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KW70A | MDE Semiconductor | 70.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
3KP28A | MDE Semiconductor | 28.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P4KE440 | MDE Semiconductor | 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KW20 | MDE Semiconductor | 20.0V; 20mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMDJ12A | MDE Semiconductor | 12.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MAX40-60.0C | MDE Semiconductor | 60.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
P6KE120A | MDE Semiconductor | 102.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KW26A | MDE Semiconductor | 26.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMCJ75A | MDE Semiconductor | 75.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMDJ130 | MDE Semiconductor | 130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMAJ33 | MDE Semiconductor | 33.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE220A | MDE Semiconductor | 185.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
SMBJ100A | MDE Semiconductor | 100.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P4KE12A | MDE Semiconductor | 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
P6KE33 | MDE Semiconductor | 26.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ33A | MDE Semiconductor | 33.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |