| Parte No | Fabricante | Aplicación |
|---|
| SMAJ36A | MDE Semiconductor | 36.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE10A | MDE Semiconductor | 8.55V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-78.0CA | MDE Semiconductor | 78.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-22.0CA | MDE Semiconductor | 22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ110 | MDE Semiconductor | 110.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW204A | MDE Semiconductor | 204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| ICTE-36 | MDE Semiconductor | 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ60 | MDE Semiconductor | 60.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-58.0C | MDE Semiconductor | 58.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| ICTE-45 | MDE Semiconductor | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 30KW30 | MDE Semiconductor | 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-22.0C | MDE Semiconductor | 22.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE220A | MDE Semiconductor | 185.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX40-100.0CA | MDE Semiconductor | 100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| ICTE-8 | MDE Semiconductor | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ11 | MDE Semiconductor | 11.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ75 | MDE Semiconductor | 75.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KW170 | MDE Semiconductor | 170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-20D681K | MDE Semiconductor | 680V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
| P6KE75A | MDE Semiconductor | 64.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-5D330K | MDE Semiconductor | 33V; max peak current250A; metal oxide varistor. Standard D series 5mm disc |
| P4KE22A | MDE Semiconductor | 18.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ8.0A | MDE Semiconductor | 8.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP9.0 | MDE Semiconductor | 9.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-18.0CA | MDE Semiconductor | 18.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-78.0C | MDE Semiconductor | 78.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW258A | MDE Semiconductor | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE39A | MDE Semiconductor | 33.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SAC8.0 | MDE Semiconductor | 8.00V; 36.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MAX20-24.0C | MDE Semiconductor | 24.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
