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P4KE30 especificación: 24.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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P4KE30 Datasheet y Espec
Fabricante : MDE Semiconductor
Embalaje :
Pins : 2
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 928 KB
Aplicación : 24.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE30 PDF Download