Path:OKDatasheet > Datasheet Semiconductor > MDE Semiconductor Datasheet > P4KE6.8A
P4KE6.8A especificación: 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
Path:OKDatasheet > Datasheet Semiconductor > MDE Semiconductor Datasheet > P4KE6.8A
P4KE6.8A especificación: 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
Fabricante : MDE Semiconductor
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Pins : 2
Temperatura : Min -55 °C | Max 175 °C
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Aplicación : 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications