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BUL52A especificación: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A similares
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A Datasheet y Espec
Fabricante : Magnatec
Embalaje : TO220
Pins : 3
Temperatura : Min 0 °C | Max 150 °C
Tamaño : 20 KB
Aplicación : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A PDF Download