BUZ906DP especificación: P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

BUZ906DP similares

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906DP Datasheet y Espec

Fabricante : Magnatec

Embalaje : TO-3PBL

Pins : 3

Temperatura : Min 0 °C | Max 150 °C

Tamaño : 42 KB

Aplicación : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.