Path:OKDatasheet > Datasheet Semiconductor > Micro Electronics Datasheet > BC307
BC307 especificación: 300mW PNP silicon planar epitaxial transistor
BC307 similares
- BC300
- 850mW NPN silicon AF medium power amplifier
- BC301
- 850mW NPN silicon AF medium power amplifier
- BC302
- 850mW NPN silicon AF medium power amplifier
- BC303
- 850mW NPN silicon AF medium power amplifier
- BC304
- 850mW NPN silicon AF medium power amplifier
- BC307
- 300mW PNP silicon planar epitaxial transistor
- BC308
- 300mW PNP silicon planar epitaxial transistor
- BC309
- 300mW PNP silicon planar epitaxial transistor
BC307 Datasheet y Espec
Fabricante : Micro Electronics
Embalaje : TO-92F
Pins : 2
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 247 KB
Aplicación : 300mW PNP silicon planar epitaxial transistor
BC307 PDF Download