Path:OKDatasheet > Datasheet Semiconductor > Micro Electronics Datasheet > BD241B
BD241B especificación: 4mW NPN silicon epitaxial base power transistor
BD241B similares
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241B Datasheet y Espec
Fabricante : Micro Electronics
Embalaje : TO-220B
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 106 KB
Aplicación : 4mW NPN silicon epitaxial base power transistor
BD241B PDF Download