Path:OKDatasheet > Datasheet Semiconductor > Mitsubishi Datasheet > MGFC36V6472A
MGFC36V6472A especificación: 6.4-7.2 GHz band 4W internally matched GaAs FET
MGFC36V6472A similares
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC36V3436
- 3.4-3.6GHz band 4W internally matched GaAs FET
- MGFC36V5258
- 5.2-5.8GHz band 4W internally matched GaAs FET
- MGFC36V59964A
- 5.9-6.4GHz band 4W internally matched GaAs FET
- MGFC36V6472A
- 6.4-7.2 GHz band 4W internally matched GaAs FET
- MGFC36V7177A
- 7.1-7.7 GHz band 4W internally matched GaAs FET
- MGFC36V7785A
- 7.7-8.5GHz band 4W internally matched GaAs fet
MGFC36V6472A Datasheet y Espec
Fabricante : Mitsubishi
Embalaje : GF-8
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 119 KB
Aplicación : 6.4-7.2 GHz band 4W internally matched GaAs FET
MGFC36V6472A PDF Download