Path:OKDatasheet > Datasheet Semiconductor > Motorola Datasheet > MGW12N120D
MGW12N120D especificación: Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D similares
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datasheet y Espec
Fabricante : Motorola
Embalaje : TO-247AE
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 274 KB
Aplicación : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D PDF Download