Path:OKDatasheet > Datasheet Semiconductor > Motorola Datasheet > MTV6N100E
MTV6N100E especificación: TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E similares
- MTV6N100E
- TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E Datasheet y Espec
Fabricante : Motorola
Embalaje : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 288 KB
Aplicación : TMOS E-FET power field effect transistor D3PAK for surface mount
MTV6N100E PDF Download