Path:OKDatasheet > Datasheet Semiconductor > Motorola Datasheet > MTW10N100E
MTW10N100E especificación: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
Path:OKDatasheet > Datasheet Semiconductor > Motorola Datasheet > MTW10N100E
MTW10N100E especificación: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
Fabricante : Motorola
Embalaje : TO-247AE
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 211 KB
Aplicación : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole