MTW45N10E especificación: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW45N10E similares

MTW45N10E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW45N10E Datasheet y Espec

Fabricante : Motorola

Embalaje : TO-247AE

Pins : 4

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 170 KB

Aplicación : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole