MTW6N100E especificación: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E similares

MTW6N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Datasheet y Espec

Fabricante : Motorola

Embalaje : TO-247AE

Pins : 4

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 214 KB

Aplicación : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole