Path:OKDatasheet > Datasheet Semiconductor > NEC Datasheet > NE4210S01-T1B
NE4210S01-T1B especificación: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B similares
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- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
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- NE429M01-T1
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NE4210S01-T1B Datasheet y Espec
Fabricante : NEC
Embalaje : 4-pin u-x type mold
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 71 KB
Aplicación : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Download