NTE3312 especificación: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

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NTE3312 Datasheet y Espec

Embalaje :

Pins : 3

Temperatura : Min 0 °C | Max 150 °C

Tamaño : 19 KB

Aplicación : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.