Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5412
NTE5412 especificación: Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5412
NTE5412 especificación: Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.
Fabricante : NTE Electronic
Embalaje : TO126
Pins : 3
Temperatura : Min -40 °C | Max 110 °C
Tamaño : 23 KB
Aplicación : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.