Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5517
NTE5517 especificación: Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5517
NTE5517 especificación: Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A.
Fabricante : NTE Electronic
Embalaje :
Pins : 3
Temperatura : Min -40 °C | Max 150 °C
Tamaño : 19 KB
Aplicación : Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A.