Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5529
NTE5529 especificación: Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5529
NTE5529 especificación: Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A.
Fabricante : NTE Electronic
Embalaje : TO48
Pins : 3
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 19 KB
Aplicación : Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A.