NTE5576 especificación: Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.

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NTE5576 Datasheet y Espec

Embalaje :

Pins : 4

Temperatura : Min -40 °C | Max 125 °C

Tamaño : 23 KB

Aplicación : Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.