Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5655
NTE5655 especificación: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5655
NTE5655 especificación: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Fabricante : NTE Electronic
Embalaje : TO92
Pins : 3
Temperatura : Min -40 °C | Max 100 °C
Tamaño : 20 KB
Aplicación : TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.