Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE570
NTE570 especificación: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE570
NTE570 especificación: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Fabricante : NTE Electronic
Embalaje :
Pins : 2
Temperatura : Min -40 °C | Max 150 °C
Tamaño : 15 KB
Aplicación : Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.