Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5875
NTE5875 especificación: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5875
NTE5875 especificación: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Fabricante : NTE Electronic
Embalaje : DO4
Pins : 2
Temperatura : Min -65 °C | Max 175 °C
Tamaño : 26 KB
Aplicación : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.