Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5899
NTE5899 especificación: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE5899
NTE5899 especificación: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.
Fabricante : NTE Electronic
Embalaje : DO4
Pins : 2
Temperatura : Min -65 °C | Max 175 °C
Tamaño : 26 KB
Aplicación : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.