NTE5999 especificación: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.

NTE5999 similares

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NTE5945
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NTE5045A
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NTE5999 Datasheet y Espec

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 175 °C

Tamaño : 28 KB

Aplicación : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.