Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE6093
NTE6093 especificación: Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE6093
NTE6093 especificación: Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.
Fabricante : NTE Electronic
Embalaje : TO3P
Pins : 3
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 19 KB
Aplicación : Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.