MGP4N60ED similares

  • MGP4N60E
    • Insulated Gate Bipolar Transistor N-Channel
  • MGP4N60ED
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Datasheet y Espec

Fabricante : ON Semiconductor 

Embalaje : TO-220 

Pins : 3 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 160 KB

Aplicación : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel 

MGP4N60ED PDF Download